ROHM DTC114WUAT106

ROHM · Transistors (BJTs) · MPN DTC114WUAT106

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain24
Operating Temperature-40℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV@10mA,0.5mA
Input Resistor10kΩ
Resistor Ratio0.47
Number1 NPN (Pre-Biased)
Pd - Power Dissipation200mW
Voltage - Input(Max)(VI(off))800mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)3V@2mA,0.3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 100mA 200mW Surface Mount UMT-3

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