ROHM DTB123YUT106

ROHM · Transistors (BJTs) · MPN DTB123YUT106

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Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain56
Current - Collector(Ic)500mA
Output Voltage(VO(on))300mV@50mA,2.5mA
Input Resistor2.2kΩ
typePNP
Resistor Ratio4.5
Number1 PNP Pre-Biased
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)2V@20mA,300mV
Voltage - Input(Max)(VI(off))300mV@100uA,5V

Technical details

50V 56 500mA PNP 1 PNP Pre-Biased 200mW UMT-3 Single, Pre-Biased Bipolar Transistors RoHS

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