ROHM DTB114ECT116

ROHM · Transistors (BJTs) · MPN DTB114ECT116

No reviews yet — be the first to review ROHM DTB114ECT116.

Specifications

Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain56
Current - Collector(Ic)500mA
Output Voltage(VO(on))300mV@50mA,2.5mA
Input Resistor13kΩ
Resistor Ratio1.2
typePNP
Number1 PNP Pre-Biased
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)3V@10mA,300mV
Voltage - Input(Max)(VI(off))500mV@100uA,5V

Technical details

50V 56 500mA PNP 1 PNP Pre-Biased 200mW TO-236-3(SOT-23-3) Single, Pre-Biased Bipolar Transistors RoHS

Related Transistors (BJTs)