ROHM DTB114ECHZGT116

ROHM · Transistors (BJTs) · MPN DTB114ECHZGT116

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain56
Operating Temperature-55℃~+150℃
Current - Collector(Ic)500mA
Output Voltage(VO(on))300mV
Input Resistor10kΩ
Resistor Ratio1
Number1 PNP Pre-Biased
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased 50V 500mA 200mW Surface Mount TO-236-3(SOT-23-3)

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