ROHM DTA115EUAT106

ROHM · Transistors (BJTs) · MPN DTA115EUAT106

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain82
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV@5mA,0.25mA
Input Resistor100kΩ
Resistor Ratio1
Number1 PNP Pre-Biased
Pd - Power Dissipation200mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)3V@1mA,0.3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased 50V 100mA 200mW Surface Mount SOT-323

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