ROHM DTA114TUAT106

ROHM · Transistors (BJTs) · MPN DTA114TUAT106

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain600
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Input Resistor13kΩ
typePNP
Number1 PNP Pre-Biased
Pd - Power Dissipation200mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-323

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