ROHM DTA114TE3HZGTL

ROHM · Transistors (BJTs) · MPN DTA114TE3HZGTL

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Specifications

Current - Collector Cutoff500nA
Collector - Emitter Voltage VCEO50V
Transition frequency(fT)250MHz
DC Current Gain600
Emitter-Base Voltage VEBO5V
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))300mV
Input Resistor13kΩ
Number1 PNP Pre-Biased
typePNP
Pd - Power Dissipation150mW

Technical details

50V 600 100mA 1 PNP Pre-Biased PNP 150mW Single, Pre-Biased Bipolar Transistors RoHS

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