ROHM DTA114EU3T106

ROHM · Transistors (BJTs) · MPN DTA114EU3T106

No reviews yet — be the first to review ROHM DTA114EU3T106.

Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain30
Operating Temperature-40℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))100mV@10mA,0.5mA
Input Resistor10kΩ
typePNP
Resistor Ratio1
Number1 PNP Pre-Biased
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)3V@10mA,0.3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-323

Related Transistors (BJTs)