ROHM DTA113ZKAT146

ROHM · Transistors (BJTs) · MPN DTA113ZKAT146

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Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain33
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))100mV@10mA,0.5mA
Input Resistor1kΩ
typePNP
Resistor Ratio10
Number1 PNP Pre-Biased
Pd - Power Dissipation200mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount TO-236-3(SOT-23-3)

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