ROHM DTA015TEBTL

ROHM · Transistors (BJTs) · MPN DTA015TEBTL

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Specifications

Current - Collector Cutoff0.5uA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Vce Saturation(VCE(sat))250mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Input Resistor100kΩ
typePNP
Number1 PNP Pre-Biased
Pd - Power Dissipation150mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased 50V 100mA 150mW Surface Mount SOT-416FL

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