ROHM BSS63AHZGT116

ROHM · Transistors (BJTs) · MPN BSS63AHZGT116

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO6V
DC Current Gain30
Pd - Power Dissipation350mW
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))500mV
Operating Temperature-

Technical details

Bipolar (BJT) Transistor PNP 100V 100mA 200MHz 350mW Surface Mount TO-236-3(SOT-23-3)

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