ROHM BC858BHZGT116

ROHM · Transistors (BJTs) · MPN BC858BHZGT116

No reviews yet — be the first to review ROHM BC858BHZGT116.

Specifications

Current - Collector Cutoff4uA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO5V
DC Current Gain210
Pd - Power Dissipation350mW
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))300mV
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 30V 100mA 250MHz 350mW Surface Mount TO-236-3(SOT-23-3)

Related Transistors (BJTs)