ROHM 2SB1189T100R

ROHM · Transistors (BJTs) · MPN 2SB1189T100R

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain180
Pd - Power Dissipation2W
typePNP
Current - Collector(Ic)700mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))200mV

Technical details

Bipolar (BJT) Transistor PNP 80V 0.7A 100MHz 2W Surface Mount SC-62

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