RENESAS P67001EXG

RENESAS · Power Management ICs · MPN P67001EXG

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Specifications

Fall Time12ns
Current - Output High(IOH)1A
Features-;Interleaved conduction protection;Built-in bootstrap diode
Load TypeMOSFET
Voltage - Supply10.8V~13.2V
Operating Temperature0℃~+70℃
Current - Output Low(IOL)2A

Technical details

1A 10.8V~13.2V 2A SOIC-8-EP Gate Drivers RoHS

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