RENESAS NESG220034-T1-A

RENESAS · Transistors (BJTs) · MPN NESG220034-T1-A

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO5.5V
Pd - Power Dissipation886mW
Current - Collector(Ic)200mA
Transition frequency(fT)11.5GHz
typeNPN

Technical details

5.5V 886mW 200mA NPN Bipolar RF Transistors RoHS

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