RENESAS ISL6615AIBZ-T

RENESAS · Power Management ICs · MPN ISL6615AIBZ-T

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Specifications

Rise Time13ns
Fall Time10ns
FeaturesEnable shutdown;Dead-time control;Interleaved conduction protection;Built-in bootstrap diode
Current - Output High(IOH)4A
Load TypeMOSFET
Operating Temperature-40℃~+85℃
Voltage - Supply4.5V~13.2V
Driven ConfigurationHalf-Bridge
Current - Output Low(IOL)6A

Technical details

4A 4.5V~13.2V 6A SOIC-8 Gate Drivers RoHS

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