RENESAS HN58V66AT10E

RENESAS · Memory ICs · MPN HN58V66AT10E

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Specifications

Memory Size64Kbit
Voltage - Supply2.7V~5.5V
Operating temperature0℃~+70℃
FeaturesHardware write protection function;Software write protection function;Noise suppression function;Power-down/Power-up pr…
Data Retention - TDR (Year)10 years
Write Cycle Time(tWC)10ms
InterfaceParallel Port (Parallel)
Write Cycle Endurance100,000 cycles

Technical details

64Kbit 2.7V~5.5V Parallel Port (Parallel) Memory (ICs) RoHS

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