RENESAS HIP2101IBT

RENESAS · Power Management ICs · MPN HIP2101IBT

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Specifications

Rise Time10ns
Fall Time10ns
FeaturesDead-time control;Built-in bootstrap diode
Current - Output High(IOH)2A
Load TypeMOSFET
Voltage - Supply9V~14V
Operating Temperature-40℃~+125℃
Driven ConfigurationHalf-Bridge
Current - Output Low(IOL)2A

Technical details

2A 9V~14V 2A SOIC-8 Gate Drivers

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