RENESAS HFA3127BZ96

RENESAS · Transistors (BJTs) · MPN HFA3127BZ96

No reviews yet — be the first to review RENESAS HFA3127BZ96.

Specifications

Collector - Emitter Voltage VCEO12V
Pd - Power Dissipation150mW
DC Current Gain40
Current - Collector(Ic)65mA
Operating Temperature-
Transition frequency(fT)8GHz
typeNPN

Technical details

12V 150mW 40 65mA NPN SOIC-16 Bipolar RF Transistors RoHS

Related Transistors (BJTs)