RENESAS HFA3102BZ96

RENESAS · Transistors (BJTs) · MPN HFA3102BZ96

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Specifications

Current - Collector Cutoff10nA
Emitter-Base Voltage(Vebo)6V
Collector - Emitter Voltage VCEO12V
DC Current Gain40
Pd - Power Dissipation250mW
Operating Temperature-40℃~+85℃
Current - Collector(Ic)30mA
Transition frequency(fT)10GHz
typeNPN

Technical details

12V 40 250mW 30mA NPN SOIC-14 Bipolar RF Transistors RoHS

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