RENESAS · Transistors (BJTs) · MPN HFA3102BZ
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| Emitter-Base Voltage(Vebo) | 6V |
|---|---|
| Collector - Emitter Voltage VCEO | 12V |
| DC Current Gain | 40 |
| Pd - Power Dissipation | 250mW |
| Operating Temperature | -40℃~+85℃ |
| Current - Collector(Ic) | 30mA |
| Transition frequency(fT) | 10GHz |
| type | NPN |
12V 40 250mW 30mA NPN SOIC-14 Bipolar RF Transistors RoHS