RENESAS HFA3096BZ

RENESAS · Transistors (BJTs) · MPN HFA3096BZ

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Specifications

Current - Collector Cutoff10nA
Emitter-Base Voltage(Vebo)6V
Collector - Emitter Voltage VCEO12V
Pd - Power Dissipation150mW
DC Current Gain40
Operating Temperature-55℃~+125℃
Current - Collector(Ic)37mA
Transition frequency(fT)8GHz
Vce Saturation(VCE(sat))500mV
typeNPN+PNP

Technical details

12V 150mW 40 37mA NPN+PNP SOIC-16 Bipolar RF Transistors RoHS

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