RENESAS CA3227M96

RENESAS · Transistors (BJTs) · MPN CA3227M96

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO8V
Pd - Power Dissipation85mW
Current - Collector(Ic)20mA
Operating Temperature-55℃~+125℃
Transition frequency(fT)3GHz
Vce Saturation(VCE(sat))500mV
typeNPN
Number5 NPN

Technical details

8V 85mW 20mA NPN Bipolar RF Transistors

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