RENESAS CA3083R4339

RENESAS · Transistors (BJTs) · MPN CA3083R4339

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Specifications

Current - Collector Cutoff1uA
Collector - Emitter Voltage VCEO15V
Pd - Power Dissipation500mW
Emitter-Base Voltage VEBO6.9V
Transition frequency(fT)450MHz
typeNPN
Vce Saturation(VCE(sat))700mV
Number5 NPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+125℃

Technical details

15V 500mW NPN 100mA Bipolar Transistor Arrays RoHS

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