RENESAS 2SC4570-T1-A

RENESAS · Transistors (BJTs) · MPN 2SC4570-T1-A

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Specifications

Emitter-Base Voltage(Vebo)3V
Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO12V
Pd - Power Dissipation120mW
Current - Collector(Ic)30mA
Transition frequency(fT)5.5GHz
typeNPN
Vce Saturation(VCE(sat))500mV
Number1 NPN

Technical details

12V 120mW 30mA NPN Bipolar RF Transistors RoHS

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