R+O S8050W-H

R+O · Transistors (BJTs) · MPN S8050W-H

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO25V
DC Current Gain400
Pd - Power Dissipation200mW
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃@(Tj)
Vce Saturation(VCE(sat))600mV

Technical details

25V 400 NPN 500mA SOT-323 Single Bipolar Transistors RoHS

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