R+O MMBTA42

R+O · Transistors (BJTs) · MPN MMBTA42

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation350mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))200mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 300V 0.5A 50MHz 350mW Surface Mount SOT-23

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