R+O MMBT5551-H

R+O · Transistors (BJTs) · MPN MMBT5551-H

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO160V
DC Current Gain300
Pd - Power Dissipation300mW
typeNPN
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃@(Tj)
Vce Saturation(VCE(sat))200mV

Technical details

160V 300 NPN 600mA SOT-23 Single Bipolar Transistors RoHS

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