R+O MMBT5401

R+O · Transistors (BJTs) · MPN MMBT5401

No reviews yet — be the first to review R+O MMBT5401.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO160V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation300mW
Number1 PNP
typePNP
Current - Collector(Ic)600mA
Vce Saturation(VCE(sat))200mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 160V 600mA 100MHz 300mW Surface Mount SOT-23

Related Transistors (BJTs)