R+O BCX56-10

R+O · Transistors (BJTs) · MPN BCX56-10

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)130MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain40
Pd - Power Dissipation500mW
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 80V 1A 130MHz 0.5W Surface Mount SOT-89

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