R+O 2SA1213

R+O · Transistors (BJTs) · MPN 2SA1213

No reviews yet — be the first to review R+O 2SA1213.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)120MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain70
Pd - Power Dissipation500mW
Number1 PNP
typePNP
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 50V 2A 120MHz 500mW Surface Mount SOT-89

Related Transistors (BJTs)