PJSEMI MMDT3904SG

PJSEMI · Transistors (BJTs) · MPN MMDT3904SG

No reviews yet — be the first to review PJSEMI MMDT3904SG.

Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
DC Current Gain300
Pd - Power Dissipation1W
Number1 NPN
typeNPN
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))200mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 1W Surface Mount SOT-23-6

Related Transistors (BJTs)