PJSEMI MMBTSC1623-L6

PJSEMI · Transistors (BJTs) · MPN MMBTSC1623-L6

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain400
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 50V 100mA 250MHz 200mW Surface Mount SOT-23

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