PJSEMI MMBTRC116SS

PJSEMI · Transistors (BJTs) · MPN MMBTRC116SS

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Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain33
Operating Temperature-
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV
Input Resistor1kΩ
typeNPN
Resistor Ratio10
Number1 NPN (Pre-Biased)
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-23

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