PJSEMI MMBT3906DC

PJSEMI · Transistors (BJTs) · MPN MMBT3906DC

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)950kHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
DC Current Gain100
Pd - Power Dissipation250mW
Number1 PNP
typePNP
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor PNP 40V 200mA 0.95MHz 250mW Surface Mount DFN-3L(1x0.6)

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