PJSEMI DTC123JDC

PJSEMI · Transistors (BJTs) · MPN DTC123JDC

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Specifications

Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain80
Operating Temperature-
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV@10mA,0.5mA
Input Resistor2.2kΩ
typeNPN
Number1 NPN (Pre-Biased)
Resistor Ratio-
Pd - Power Dissipation200mW
Voltage - Input(Max)(VI(off))1V

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 100mA 200mW Surface Mount DFN-3L(1x0.6)

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