PJSEMI 2SD965ASQ-R

PJSEMI · Transistors (BJTs) · MPN 2SD965ASQ-R

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO7V
DC Current Gain650
Pd - Power Dissipation750mW
Number1 NPN
typeNPN
Current - Collector(Ic)5A
Operating Temperature-
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor NPN 30V 5A 150MHz 0.75W Surface Mount SOT-89

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