PJSEMI 2N5551SQ

PJSEMI · Transistors (BJTs) · MPN 2N5551SQ

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO160V
Emitter-Base Voltage VEBO6V
DC Current Gain80
Pd - Power Dissipation500mW
Number1 NPN
typeNPN
Current - Collector(Ic)600mA
Vce Saturation(VCE(sat))200mV

Technical details

Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 500mW Surface Mount SOT-89

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