PANJIT PBHV8110DW_R2_00001

PANJIT · Transistors (BJTs) · MPN PBHV8110DW_R2_00001

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO100V
DC Current Gain140
Pd - Power Dissipation2.6W
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))450mV

Technical details

100V 140 NPN 1A SOT-223 Single Bipolar Transistors RoHS

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