PANJIT · Transistors (BJTs) · MPN MMDT3904TB6_R1_00001
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| Current - Collector Cutoff | 50nA |
|---|---|
| DC Current Gain | 100 |
| Collector - Emitter Voltage VCEO | 40V |
| Pd - Power Dissipation | 225mW |
| Emitter-Base Voltage VEBO | 6V |
| Transition frequency(fT) | - |
| Vce Saturation(VCE(sat)) | 300mV |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 200mA |
| Operating Temperature | -55℃~+150℃ |
100 40V 225mW NPN 200mA SOT-563 Bipolar Transistor Arrays RoHS