PANJIT MMDT2227A_R1_00001

PANJIT · Transistors (BJTs) · MPN MMDT2227A_R1_00001

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Specifications

Current - Collector Cutoff50nA
Collector - Emitter Voltage VCEO60V
Pd - Power Dissipation225mW
DC Current Gain100
Emitter-Base Voltage VEBO5V
Transition frequency(fT)300MHz
Vce Saturation(VCE(sat))1.6V
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃

Technical details

60V 225mW 100 NPN+PNP 600mA SOT-363 Bipolar Transistor Arrays RoHS

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