PANJIT MMDT2222A_R1_00001

PANJIT · Transistors (BJTs) · MPN MMDT2222A_R1_00001

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Specifications

Current - Collector Cutoff10nA
Collector - Emitter Voltage VCEO40V
DC Current Gain100
Pd - Power Dissipation225mW
Emitter-Base Voltage VEBO6V
Transition frequency(fT)300MHz
Vce Saturation(VCE(sat))300mV
typeNPN
Number2 NPN
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃

Technical details

40V 100 225mW NPN 600mA SOT-363 Bipolar Transistor Arrays RoHS

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