PANJIT · Transistors (BJTs) · MPN IMZ1AS_S1_00001
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| Current - Collector Cutoff | 100nA |
|---|---|
| DC Current Gain | 120 |
| Pd - Power Dissipation | 300mW |
| Collector - Emitter Voltage VCEO | 60V |
| Emitter-Base Voltage VEBO | 7V |
| Transition frequency(fT) | 180MHz |
| Vce Saturation(VCE(sat)) | 500mV |
| type | NPN+PNP |
| Number | 1 NPN + 1 PNP |
| Current - Collector(Ic) | 150mA |
| Operating Temperature | -55℃~+150℃ |
120 300mW 60V NPN+PNP 150mA SOT-23-6 Bipolar Transistor Arrays RoHS