PANJIT IMZ1AS-AU_S1_000A1

PANJIT · Transistors (BJTs) · MPN IMZ1AS-AU_S1_000A1

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Specifications

Current - Collector Cutoff100nA
Pd - Power Dissipation300mW
DC Current Gain120
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
Transition frequency(fT)180MHz
Vce Saturation(VCE(sat))400mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)150mA
Operating Temperature-55℃~+150℃

Technical details

300mW 120 60V NPN+PNP 150mA SOT-23-6 Bipolar Transistor Arrays RoHS

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