PANJIT BC859B_R1_00001

PANJIT · Transistors (BJTs) · MPN BC859B_R1_00001

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain220
Pd - Power Dissipation330mW
typePNP
Current - Collector(Ic)100mA
Operating Temperature-50℃~+150℃
Vce Saturation(VCE(sat))650mV

Technical details

30V 220 PNP 100mA SOT-23 Single Bipolar Transistors RoHS

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