PANJIT BC846AS_R1_00001

PANJIT · Transistors (BJTs) · MPN BC846AS_R1_00001

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Specifications

Current - Collector Cutoff15nA
Pd - Power Dissipation150mW
DC Current Gain110
Collector - Emitter Voltage VCEO65V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)-
Vce Saturation(VCE(sat))600mV
typeNPN
Number1 NPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

150mW 110 65V NPN 100mA SOT-363 Bipolar Transistor Arrays RoHS

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