PANJIT BC817DPN-AU_R1_000A1

PANJIT · Transistors (BJTs) · MPN BC817DPN-AU_R1_000A1

No reviews yet — be the first to review PANJIT BC817DPN-AU_R1_000A1.

Specifications

Current - Collector Cutoff100nA
Pd - Power Dissipation330mW
DC Current Gain100
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
Transition frequency(fT)100MHz
typeNPN+PNP
Vce Saturation(VCE(sat))700mV
Number1 NPN + 1 PNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃

Technical details

330mW 100 45V NPN+PNP 500mA SOT-23-6 Bipolar Transistor Arrays RoHS

Related Transistors (BJTs)