OSEN OSE13009-1

OSEN · Transistors (BJTs) · MPN OSE13009-1

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO9V
DC Current Gain30
Pd - Power Dissipation100W
Number1 NPN
typeNPN
Current - Collector(Ic)12A
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor NPN 400V 12A 4MHz 100W Through Hole TO-220AB

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