OSEN OSC5200

OSEN · Transistors (BJTs) · MPN OSC5200

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)10MHz
Collector - Emitter Voltage VCEO230V
DC Current Gain160
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation150W
Number1 NPN
typeNPN
Current - Collector(Ic)15A
Vce Saturation(VCE(sat))1.2V

Technical details

Bipolar (BJT) Transistor NPN+PNP 230V 15A 150W Through Hole TO-3PL

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