OSEN MJW21196G-OSEN

OSEN · Transistors (BJTs) · MPN MJW21196G-OSEN

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)10MHz
Collector - Emitter Voltage VCEO250V
DC Current Gain160
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation200W
Number1 NPN
typeNPN
Current - Collector(Ic)16A
Vce Saturation(VCE(sat))1.4V

Technical details

250V 160 1 NPN NPN 16A TO-3PNB Single Bipolar Transistors RoHS

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